pubs

Journal Publications

S. Datta and R. Lake, "Voltage Probes and Inelastic Scattering," Phys. Rev. B, 44, 6538 (1991).
G. Neofotistos, R. Lake, and S. Datta, "The Non-Equilibrium Green’s Function Method Applied to Double Barrier Resonant Tunneling Diodes", Phys. Rev. B, 43, 2442 (1992).
R. Lake and S. Datta, "The Non-Equilibrium Green’s Function Method Applied to Double Barrier Resonant Tunneling Diodes", Phys. Rev. B, 45, 6670 (1992).
R. Lake and S. Datta, "High-Bias Quantum Electron Transport," Superlattices and Microstructures, 11, 83 (1992).
Y. Lee, M. McLennan, G. Klimeck, R. Lake and S. Datta, "Quantum Kinetic Analysis of Mesoscopic Systems: Linear Response," Superlattices and Microstructures, 11, 137 (1992).
R. Lake and S. Datta, "Energy Balance and Heat Exchange in Mesoscopic Systems," Phys. Rev. B, 46, 4757 (1992).
P. Bagwell and R. Lake, "Resonances in Transmission through an Oscillating Barrier," Phys. Rev. B, 46, 15329 (1992).
R. Lake, G. Klimeck, and S. Datta, "Rate Equations from the Keldysh Formalism Applied to the Phonon Peak in Asymmetric Resonant-Tunneling Diodes," Phys. Rev. B, 47, 6427 (1993).
R. Lake, G. Klimeck, M. P. Anantram, and S. Datta, "Rate Equations for the Phonon Peak in Resonant Tunneling Diodes", Phys. Rev. B, 48, 15132 (1993).
G. Klimeck, R. Lake, S. Datta, and G. Bryant, "Elastic and Inelastic Scattering in Quantum Dots in the Coulomb Blockade Regime," Phys. Rev. B, 50, 5484 (1994).
K. C. Huang, M. Carroll, G. Starnes, R. Lake, D. Janes, K. Webb, and M. Melloch, "Numerically Generated Resonant Tunneling Diode Equivalent Circuits," J. Appl. Phys., 76, 3850 (1994).
R. C. Bowen, W. R. Frensley, G. Klimeck, and R. Lake, "Transmission resonances and zeros in multi-band models," Phys. Rev. B, 52, 2754 (1995).
G. Klimeck, R. Lake, R. C. Bowen, W. R. Frensley and T. Moise, "Quantum Device Simulation with a Generalized Tunneling Formula," Appl. Phys. Lett., 67, 2539 (1995).
R. C. Bowen, G. Klimeck, R. Lake, W. R. Frensley, and T. Moise, "Quantitative Resonant Tunneling Diode Simulation," J. of Appl. Phys., 81, 3207 (1997).
R. Lake, G. Klimeck, R. C. Bowen and D. Jovanovic, "Single and Multi-Band Modeling of Quantum Electron Transport through Layered Semiconductor Devices," J. of Appl. Phys., 81, 7845 (1997).
T. B. Boykin, G. Klimeck, R. C. Bowen, and R. Lake, "Effective mass reproducibility of the nearest-neighbor sp3s* models: analytic results," Phys. Rev. B, 56, 4102 (1997).
G. Klimeck, R. Lake, and D. K. Blanks, "Role of interface roughness scattering in self-consistent resonant tunneling diode simulations," Phys. Rev. B, 58, 7279 (1998).
S. L. Rommel, T. E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck, and D K. Blanks, "Room temperature operation of epitaxially grown Si/Si_0.5Ge_0.5/Si resonant interband tunneling diodes," Appl. Phys. Lett., 73, 2191 (1998).
T. B. Boykin, R. Lake, G. Klimeck, and M. Swaminathan, "Interface effects in tunneling models with identical real and complex dispersions," Phys. Rev. B, 59, 7316 (1999).
S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities," IEEE Electron Dev. Lett., 20, 329 (1999).
P. E. Thompson, K. D. Hobart, M. E. Twigg, G. G. Jernigan, T. E. Dillon, S. L. Rommel, P. R. Berger, D. S. Simons, P. H. Chi, R. Lake, and A. C. Seabaugh, "Si resonant interband tunnel diodes grown by low-temperature molecular beam epitaxy," Appl. Phys. Lett., 75, 1308 (1999).
R. Wilkins, S. Shojah-Ardalan, W. P. Kirk, G. F. Spencer, R. T. Bate, A. C. Seabaugh, R. Lake, P. Stelmaszyk, A. D. Wieck, and T. N. Fogarty, "Ionization and Displacement Damage Irradiation Studies of Quantum Devices: Resonant Tunneling Diodes and Two-Dimensional Electron Gas Transistors," IEEE Transactions on Nuclear Science, 46, 1702 (1999).
M. Dashiell, R. Troeger, S. Rommel, T. Adam, P. Berger, C. Guedj, J. Kolodzey, A. Seabaugh, R. Lake, "Current-Voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing," IEEE Trans. on Electron Dev., 47, 1707 (2000).
C. Rivas, R. Lake, G. Klimeck, W. R. Frensley, M. V. Fischetti, P. E. Thompson, S. L. Rommel, and P. R. Berger, "Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts," Appl. Phys. Lett., 78, 814 (2001).
T. Sandu, R. Lake, and W. Kirk, "The effect of interface quality on Si/SiO₂ resonant tunnel diodes," Superlattices and Microstructures, 30, 201 (2001).

Book Chapters

A. Seabaugh and R. Lake, "Tunnel Diodes," in the Encycl. Appl. Phys., 20, (Am. Inst. Phys. VCH Pub., NY, 1996-7) p. 335.

Conference Proceedings

D. Miller, R. Lake, S. Datta, M. Lundstrom, M. Melloch, and R. Reifenberger, "Modulation of the Conductance of T-Shaped Electron Waveguide Structures with a Remote Gate" in Nanostructure Physics and Fabrication Proceedings of the International Symposium, edited by M. Reed and W. Kirk, (Academic Press, New York, 1989), p. 165.
M. McLennan, Y. Lee, R. Lake, G. Neofotistos, and S. Datta, "Dissipative Quantum Transport in Electron Waveguides" in Computational Electronics Semiconductor Transport and Device Simulation, edited by K. Hess, J. P. Leburton, and U. Ravaioli, (Kluwer Academic Publishers, Boston, 1990), p. 247.
R. Lake and S. Datta, "Inelastic Scattering in Resonant Tunneling with Emitter Quasi-bound States" in Nanostructures and Mesoscopic Systems Proceedings of the International Symposium, edited by W. Kirk and M. Reed, (Academic Press, New York, 1992), p. 387.
P. Bagwell, A. Kumar, and R. Lake, "Scattering and Quantum Localization in a Waveguide by Static and Time-Varying Potentials" in Quantum Effect Physics, Electronics, and Applications, edited by K. Ismail, (Adam Hilger, Bristol, 1992).
R. Lake, "A First Step for Semiconductor Quantum Device Modeling with Incoherent Scattering" in Quantum Transport in Ultrasmall Devices, NATO ASI Series, v. 342, edited by D. K. Ferry, H. L. Grubin, C. Jacobani, and A. Jauho, (Plenum Press, New York, 1995), p. 521.
S. Datta, G. Klimeck, R. Lake and M. P. Anantram, "Resonant Tunneling devices: Effect of Scattering" in Compound Semiconductors 1994. Proceedings of the Twenty First International Symposium, (IOP Publishing, Bristol, UK, 1995), p. 775.
G. Klimeck, R. Lake, R. C. Bowen, W. R. Frensley, and D. Blanks, "Nanoelectronic Modeling (NEMO)" in the 1995 53rd Annual Device Research Conference Digest, (IEEE, NY, 1995), p. 52.
R. Lake, G. Klimeck, R. C. Bowen, C. Fernando, D. Jovanovic, D. Blanks, T. S. Moise, Y. C. Kao, M. Leng, and W. R. Frensley, "Experimentally Verified Quantum Device Simulations Based on Multiband Models, Hartree Self-Consistency, and Scattering Assisted Charging" in the 1996 54th Annual Device Research Conference Digest, (IEEE, NY, 1996), p. 174.
R. Lake, G. Klimeck, R. C. Bowen, C. Fernando, M. Leng, T. Moise and Y. C. Kao, "Interface Roughness and Polar Optical Phonon Scattering And the Valley Current in Resonant Tunneling Devices", Superlattices and Microstructures, 20, 279 (1996).
W. R. Frensley, R. C. Bowen, C. Fernando, G. Klimeck, and R. Lake, "Quantitatively Accurate Simulation of Quantum Semiconductor Devices", in Proceedings. International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, (IEEE Comput. Soc. Press, Los Alamitos, CA, 1996), p. 2.
Gerhard Klimeck, Roger Lake, Chenjing L. Fernando, R. Chris Bowen, Dan Blanks, Manhua Leng, Ted Moise, Y. C. Kao, and William R. Frensley in "Quantum Devices and Circuits" edited by K. Ismail, S. Bandyopadhyay, and J. P. Leburton, Imperial Press London (1996).
G. Klimeck, T. Boykin, R. C. Bowen, R. Lake, D. Blanks, T. S. Moise, Y. C. Kao, and W. R. Frensley, "Quantitavie Simulation of Strained and Unstrained InP-Based Resonant Tunneling Diodes," in the 1997 55th Annual Device Research Conference Digest, (IEEE, NY, 1997), p. 92.
C. Bowen, C. Fernando, G. Klimeck, A. Chaterjee, D. Blanks, R. Lake, J. Hu, J. Davis, M. Kulkarni, S. Hattangady, and I-C. Chen, Physical Oxide Thickness Extraction and Verification Using Quantum Mechanical Simulation," Proceedings of the IEDM (IEEE, 1997) p. 869.
R. Lake, G. Klimeck, and D. Blanks, "Quantum Transport with Band-Structure and Schottky Contacts," Phys. Stat. Sol. (b), 204, 354 (1997).
G. Klimeck, R. Lake, D. Blanks, C. Fernando, R. Bowen, T. Moise, and Y. C. Kao, "The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes," Phys. Stat. Sol. (b), 204, 408 (1997).
A. Seabaugh, R. Lake, B. Brar, R. Wallace, and G. Wilk, "Beyond-the-roadmap technology: silicon heterojunctions, optoelectronics, and quantum devices," Materials and Devices for Silicon-Based Optoelectronics (Mater. Res. Soc., Warrendale, PA, 1998) p. 67.
G. Klimeck, R. Lake, R. Bowen, C. Fernando, and W. R. Frensley, "Resolution of resonances in a general purpose quantum device simulator," VLSI Design, 6, 107 (1998).
R. Lake, G. Klimeck, R. Bowen, D. Jovanovic, P. Sotirelis, and W. R. Frensley, "A Generalized Tunneling Formula for Quantum Device Modeling," VLSI Design, 6, 9 (1998).
R. Lake, B. Brar, G. Wilk, A. Seabaugh, and G. Klimeck, "Resonant Tunneling in disordered Materials such as SiO₂/Si/SiO₂," Compound Semiconductors 1997. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors,(IEEE, New York, 1998) p. 617.
J. P. A. Van der Wagt, A. C. Seabaugh, G. Klimeck, E. A. Beam, T. B. Boykin, R. C. Bowen, and R. Lake, "Ultralow current density RTDs for tunneling-based SRAM," Compound Semiconductors 1997. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors,(IEEE, New York, 1998) p.601.
D. K. Blanks, G. Klimeck, R. Lake, D. Jovanovic, R. C. Bowen, C. Fernando, W. Frensley, and M. Leng, "NEMO: general release of a new comprehensive quantum device simulator," Compound Semiconductors 1997. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors,(IEEE, New York, 1998) p. 639.
R. Lake, G. Klimeck, and D. Blanks, "Interface Roughness and Polar Optical Phonon Scattering in In_0.53Ga_0.47As/AlAs/InAs RTDs," Semicond. Sci. Tech., 13, A163 (1998).
G. Klimeck, R. Lake, and D. Blanks, "Numerical Approximations to the Treatment of Interface Roughness Scattering in Resonant Tunneling Diodes," Semicond. Sci. Tech., 13, A165 (1998).
G. Klimeck, D. Blanks, R Lake, R.C. Bowen, C. L. Fernando, M. Leng, W. Frensley, D. Jovanovic, and P. Sotirelis, "Writing research software in a large group for the NEMO project," VLSI Design, 8, 79 (1998).
A. Seabaugh, X. Deng, t. Blake, B. Brar, T. Broekaert, R. Lake, F. Morris, and G. Frazier, "Transistors and Tunnel Diodes for analog/mixed-signal circuits and embedded memory," 1998 IEDM Technical Digest (IEEE, New York, 1998) p. 429.
S. L. Rommel, T. E. Dillon, P. R. Berger, R. Lake, P. E. Thompson, K. D. Hobart, A. C. Seabaugh, and D. S. Simmons, "Si-based interband tunneling devices for high-speed logic and low power memory applications," 1998 IEDM Technical Digest (IEEE, New York, 1998) p. 1035.
S. L. Rommel, N. N. Jin, T. Dillon, S. DiGiacomo, J. Banyai, B. Cord, C. D’Imperio, D. Hancock, N. Kirpalani, V. Cmanuele, P. Berger, P. Thompson, K. Hobart, and R. Lake, "Development of delta B/I-Si/delta Sb and delta Sb/I-Si/delta B resonant interband tunnel diodes for integrated circuit applications, 58th DRC . Device Research Conference Digest (IEEE, NJ, 2000) p. 159.
P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommell, N. Jin, P. R. Berger, R. Lake, A. Seabaugh, P. Chi, D. Simons, "Epitaxial Si-based tunnel diodes," Thin Solid Films, 380, 145 (2000).
R. Lake, "Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs," International Electron Devices Meeting. Technical Digest, (IEEE, NJ, 2001) p. 5.5.1.

Invited Presentations

R. Lake, G. Klimeck, C. Fernando, R. C. Bowen, T. Moise, Y. C. Kao, and D. Francovicchio, "Interface Roughness and Polar Optical Phonon Scattering in RTDs: theory, modeling and experiment", 23rd Conference on the Physics and Chemistry of Semiconductor Interfaces, La Jolla, CA, Jan. 21-25, 1996.
R. Lake, G. Klimeck, R. C. Bowen, C. Fernando, T. Moise, D. Francovicchio, and Y. C. Kao, "Transport Physics of Tunnel Devices", Third International Symposium on Nanostructures and Mesoscopic Structures, Sante Fe, NM, May 19-24, 1996.
R. Lake, "1-D and 2-D High Bias Quantum Device Modeling," Workshop on Future Topics in Computational Electronics, Beckman Institute, Univ. of Ill., at Urbana Champagne, Sept. 30 – Oct. 1, 1996.
R. Lake, "On elementary Excitations in Quantum-Well Structures," Taos Summer School, Taos, NM, Aug. 15-17, 1997.
R. Lake, "2D – 3D Quantum Modeling," Research Issues and Directions for Nanotransistors: Technology, Physics, and Simulation, NIST, Gaithersburg, MD, Feb. 8-9, 1999.
R. Lake, "Si-based Tunnel Diode Operation and Forecasted Performance," Si Tunnel Diode and CMOS / HBT Integration Workshop, sponsored by the SRC, NRL, Washington, D.C., Dec. 9, 1999.
R. Lake, "Full Quantum simulation, Design, and Analysis of Si Tunnel Devices, MOS leakage and Capacitance, HEMTs and RTDs," IEDM, Washington, D.C., Dec. 2-5, 2001. (presentation)
R. Lake, D. Jovanovic, and C. Rivas, "Nonequilibrium Green's functions in semiconductor device modeling," Progress in Nonequilibrium Green's functions," Dresden, Aug. 19-23, 2002.