Laboratory for Terascale and Terahertz Electronics (LATTE)

M. A. Khayer and R. K. Lake, “Diameter dependent performance of high-speed, low-power InAs  nanowire field-effect transistors”, J. Appl. Phys.: Device Physics, vol. 107, 014502, pp. 1-7, 2010.

N. A. Bruque, M. K. Ashraf, G. J. O. Beran, T. R. Helander, and R. K. Lake, "Conductance of a Conjugated Molecule with Carbon Nanotube Contacts," Phys. Rev. B, 80, 155455 (2009).

M. A. Khayer and R. K. Lake, Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-To-Band Tunneling FETs, IEEE Elect. Dev. Lett., 30(12) 1257 (2009).

M. A. Khayer and R. K. Lake, The Quantum and Classical Capacitance Limits of InSb and InAs Nanowire FETs, IEEE Trans. Elect. Dev., 56(10) 2215-2223 (2009)

M. K. Ashraf, R. R. Pandey, R. K. Lake, B. Millare, A. Gerasimenko, D. Bao, and V. Vullev, ‘Bioinspired Macromolecular Electrets Based on Anthranilamide Derivatives,’ Biotechnology Progress, 25, 4, 915-922 (2009).

M. K. Ashraf, N. A. Bruque, R. R. Pandey, P. G. Collins, and R. K. Lake, Effect of Localized Oxygen Functionalization on the Conductance of Metallic Carbon Nanotubes, Phys. Rev. B, 79, 115428 (2009).

Conference Proceedings

M. A. Khayer and R. K. Lake, ''Modeling and Performance Analysis of High-Speed, High-Power GaN Nanowire FETs'' 67th Device Research Conference, IEEE, 107-108, Penn State University, June 2009.

M. A. Khayer and R. K. Lake, "Modeling and Performance Analysis of High-Speed, Low-Power InAs Nanowire Field-Effect Transistors'' 36th International Symposium on Compound Semiconductors, 245-6, UCSB, August 2009.

J. Lin, D. Teweldebrhan, K. Ashraf, G. Liu, X. Jing, J. Yan, R. Li, R. Lake, M. Ozkan, A. Balandin, C. Ozkan, ''Gating of single layer graphene using DNA'' Nanobiosystems: Processing, Characterization, and Applications II, Proc. of SPIE, SPIE, 7403, 74030C 1-10, San Diego, CA, August 2009

M. A. Khayer and R. K. Lake, “Performance analysis of InP nanowire band-to-band tunneling field-effect transistors”, Appl. Phys. Lett.: Device Physics, 95, 073504, 2009.

Conference Proceedings

M. A. Khayer and R. K. Lake, “High-speed and Low-power Performance of n-type InSb/InP and InAs/InP Core/Shell Nanowire Field Effect Transistors for CMOS Logic Applications,” Mater. Res. Soc. Symp. Proc. vol. 1178, 2009 Materials Research Society, paper no. 1178-AA01-07.

M. Khayer and R. Lake, 'Performance of n-type InSb and InAs Nanowire Field-Effect Transistors,’ IEEE Trans. Elect. Dev., 55(11), 2939-2945 (2008).

M. A. Khayer and R. K. Lake, "The Quantum Capacitance Limit of High-Speed, Low-Power InSb Nanowire Field Effect Transistors," Proceedings of the International Electron Device Meeting 2008, San Francisco, CA, Dec. 2008, pp. 193-196.

CNT - MOLECULAR ELECTRONICS

N. A. Bruque, R. R. Pandey, and R. K. Lake, "Electron Transport through a Conjugated Molecule with Carbon Nanotube Leads," Phys. Rev. B, 76, 205322 (2007)

D. Shah, N. A. Bruque, K. Alam, R. K. Lake and R. R. Pandey, "Electronic properties of carbon nanotubes calculated from density functional theory and the empirical p-bond model," Journal of Computational Electronics, 6(4) 395-400 (2007). (online)

CNTFET DESIGN

K. Alam and R. K. Lake, "Performance metrics of a 5 nm, planar, top gate, carbon nanotube on insulator (COI) transistor," IEEE Transactions on Nanotechnology, 6(2), 186-190 (2007). (online)

PhD Thesis

Khairul Alam, "Quantum Theory, Modeling, Analysis, and Design of Carbon Nanotube Field Effect Transistors," Ph.D. Thesis, University of California Riverside, Dec. 2006

REVIEW

R. K. Lake and R. Pandey, "Non-Equilibrium Green Functions in Electronic Device Modeling," in Handbook of Semiconductor Nanostructures, v. 3, A. A. Balandin and K. L. Wang, eds., (American Scientific Publishers, Stevenson Ranch), pp. 409 - 443, (2006). http://arxiv.org/abs/cond-mat/0607219

CNTFET DESIGN

K. Alam and R. K. Lake, "Dielectric scaling of a zero-Schottky-barrier, 5 nm gate, carbon nanotube transistor with source/drain underlaps," J. Appl. Phys., 100(2), 024317 (2006), dx.doi.org/10.1063/1.2218764

CNT - MOLECULAR ELECTRONICS

X. Wang, F. Liu, G. T. S. Andavan, X. Jing, N. Bruque, R. R. Pandey, and R. K. Lake, K. Singh, M. Ozkan, K. L. Wang, and C. Ozkan, "Carbon Nanotube-DNA Nanoarchitectures and Electronic Functionality," Small, 2(11), 1356 - 1365 (2006), dx.doi.org/10.1002/smll.200600056

N. Bruque, K. Alam, R. R. Pandey, R. K. Lake, J. P. Lewis, X. Wang, F. Liu, C. Ozkan, M. Ozkan, and K. L. Wang, "Self-Assembled carbon nanotubes for electronic circuit and device applications," J. Nanoelectronics and Optoelectronics, 1(1), 74-81 (2006), dx.doi.org/10.1166/jno.2006.007 and preprint (with color figures)

R. R. Pandey, N. Bruque, K. Alam, and R. K. Lake, "Carbon nanotube - molecular resonant tunneling diode" Phys. Stat. Sol. (a), 203(2), R5 - R7 (2006), dx.doi.org/10.1002/pssa.200521467

CNT - MOLECULAR ELECTRONICS

N. Bruque, R. R. Pandey, R. K. Lake, H. Wang and J. P. Lewis, "Electronic transport thorough a CNT - Pseudopeptide - CNT hybrid material," Molecular Simulation, 31(12), 859 - 864 (2005), dx.doi.org/10.1080/08927020500323879

CNTFET DESIGN

K. Alam and R. K. Lake, "Leakage and performance of zero-schottky-barrier carbon nanotube transistors," J. Appl. Phys., 98(6), 064307 (2005).

K. Alam and R. Lake, "Performance of 2 nm gate length carbon nanotube field-effect transistors with source/drain underlaps," Appl. Phys. Lett., 87(7), 73104 (2005)

NANOWIRES

Y. Zheng, C. Rivas, R. Lake, K. Alam, T. B. Boykin, and G. Klimeck, "Electronic properties of silicon nanowires," IEEE Trans.  Elect. Dev., 52, 1097-1103 (2005)

TUNNEL DIODES

S.-Y. Chung, N. Jin, P. R. Berger, R. Yu, P.E. Thompson, R. Lake, S. L. Rommel, S. K. Kurinec, "Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration." Appl. Phys. Lett., 84(14),   2688-90 (2004)

Y. Zheng and R. Lake, "Self-consistent transit-time model for a resonant tunnel diode," IEEE Trans. Elect. Dev., 51(4) 535-541, (2004)

NANOWIRES

C. Rivas, R. Lake, ''Non-equilibrium Green function implementation of boundary conditions for full band simulations of substate-nanowire structures,'' Physica Status Solidi (b), 239(1), 94-102 (2003)

REVIEW

R. Lake, D. Jovanovic, C. Rivas, ''Non-equilibrium Green's Functions in Quantum Device Modeling,'' Progress in Nonequlibrium Green's Functions II, M. Bonitz and D. Semkat, eds., World Scientific, New Jersey, Dresden, Germany, August 2002, 143-158, 2003

TUNNEL DIODES

S.Y. Chung, N. Jin, R. Yu, P.R. Berger, P.E. Thompson, R. Lake, S.L. Rommel, S.K. Kurinec, ''Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios,'' The 2003 International Electron Devices Meeting Technical Digest, (IEEE, New York), Washington, D.C., December 2003, 12.2.1 - 12.2.4, (2003)

N. Jin, S.Y. Chung, A.T. Rice, P.R. Berger, R. Yu, P.E. Thompson, R. Lake, ''151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high power mixed signal applications,'' Appl. Phys. Lett., 83(16), 3308-3310, (2003)

C. Rivas, R. Lake, W.R. Frensley, G. Klimeck, P.E. Thompson, K.D. Hobart, S.L. Rommel, P.R. Berger, ''Full Band Modeling of the Excess Current in a Delta-Doped Silicon Tunnel Diode,'' J. Appl. Phys., 94(8), 5005-5013, (2003)