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M.S. Defense Tuesday, August 21, 2007 Room 202 ENG II 11:00AM Title: Assembly of nanowires/nanoparticles and their electrical characterizations Abstract: Over the past few years, nanoscale materials have been used to various devices such as the channels, diodes and transistors. Generally, there are two main methods in the nanotechnology which are bottom-up approach and top-down approach. Many researchers have synthesized many kinds of nanowires and nanoparticles , and they tried to assemble them into components for electronic devices. One of the challenges is to make nanoscale structures with nanometer-scale elements in a controllable way. There is a high technique which is called Langmuir-Blodgett method inducing nanowire alignement on a huge scale into two-dimensional assemblies. Moreover, the Langmuir-Blodgett technique is be used to make thin films, and it has abilities of the precise control of the monolayer thickness, homogeneous deposition of the monolayer over large areas and the possibility to make multilayer structures. This advantage of this technique is that monolayers can be coated on almost all kinds of solid substrates. Indium Antimonide nanowires which made by our lab have been assembled under various conditions. In addition, a device composed of network nanowires has been fabricated and its electrical characterization has been measured. Quantum dots are another material which has been taken to deposit a monolayer by Langmuir-Blodgett method. |
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